MBE systems of STE3N* series are specially designed with consideration to specific A3N materials growth and ensures extremely wide range of available growth parameters (effective flux nitrogen, max substrate temperature, process vacuum level). STE3N* successfully resolved the problem of providing extremely high temperatures on the substrate (> 1200°C) as well as reliable work of heating stage during a long growth cycle. It allows to grow high-quality, thick AlN/AlGaN buffer layers using ammonia as active nitrogen source. This technology results in growth of active layers with extremely low dislocation density, record for MBE.