Molecular beam epitaxy (MBE) on GaAs and InP substrates
Epiwafers for optoelectronic and microwave devices: laser diodes including VCSELs, photodiodes, microwave transistors, and diodes
100% non-destructive epiwafer characterization (defect analysis, PL spatial mapping, sheet resistance)
Careful calibration of epi-layer composition, thickness, and doping using X-ray characterization, PL measurements, Hall technique, and ECV profiling
Customer’s design