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SOLID-STATE ELECTRONIC MICROWAVE DEVICES
low-noise and power transistors with 0.2 μm gate length;
plated holes in GaAs;
"air bridges" for intersections;
thin-film resistors, capacitors and inductances for MMIC passive part
Part number:
Supplier:
The Ruselectronics holding companyDescription
In order to reach parity in the development of domestic MMIC technology the following technologies are being developed:
the technology of manufacturing T-shape gate 0.1 μm length;
the technology of manufacturing heterostructures with high electron mobility.
The first in Russia pilot line on development and production of transistors and MMICs with dimensional processing 0.2 μm and volume of production 1 million chips per year has been built in FSUE "RPC "Istok"
the technology of manufacturing T-shape gate 0.1 μm length;
the technology of manufacturing heterostructures with high electron mobility.
The first in Russia pilot line on development and production of transistors and MMICs with dimensional processing 0.2 μm and volume of production 1 million chips per year has been built in FSUE "RPC "Istok"
Specification
1. Specification_RUS.docx