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Matrix Charge Coupled Photosensitive Device FPPZ 34M
FPPZ has an accumulation section and a memory section. The memory section has a format of 1048 (G) × 1032 (V) pixels and control independent of the accumulation section. Resistance of FPPZ to IICP to the influence of factor 7.С with characteristics 7.С4 is not lower than 5.75 × 1Us.
Part number:
Supplier:
The Ruselectronics holding companyDescription
DESCRIPTION
FPPZ 34M, resistant to ionizing radiation of outer space (IICP), is designed to work in the visible and near infrared spectral regions, providing increased accuracy and noise immunity of optical-electronic astro-orientation devices of spacecraft (SC), goniometers of spacecraft, increased range of target detection under conditions increased radiation and ultra-wideband electromagnetic effects of electronic jamming.
Application
spacecraft;
nuclear power facilities;
robotics and vision systems.
Main settings
The number of pixels 1024x1024
Pixel size, mkm 11 × 11
Saturation voltage, mV ≥1000
Modulation transfer coefficient at 500 TVL horizontally,% ≥50
The average value of the dark signal, mV / c ≤4
RMS non-uniformity of the dark signal across the field,% ≤4
RMS local 5 × 5 pixel irregularity of the dark signal,% ≤3
Relative root mean square non-uniformity of the output signal across the field,% ≤10
Relative root mean square local in the area of 5 × 5 pixels of the output signal,% ≤9
Integral sensitivity, reduced to source type A, B / (lx · s) 10 ÷ 15
Threshold exposure (at accumulation time up to 1 s), lx · s ≤2 · 10-5
The coefficient of suppression of local peresvetki, Rel. units ≥2
Charge transfer inefficiency, rel. units 1 · 10-5
Spectral sensitivity range, nm 450 ÷ 1000
Number of white and black defective pixels, pcs. ≤100
On the basis of the device, upon request of the Customer, an integrated product can be developed, including a control and signal processing device.
FPPZ 34M, resistant to ionizing radiation of outer space (IICP), is designed to work in the visible and near infrared spectral regions, providing increased accuracy and noise immunity of optical-electronic astro-orientation devices of spacecraft (SC), goniometers of spacecraft, increased range of target detection under conditions increased radiation and ultra-wideband electromagnetic effects of electronic jamming.
Application
spacecraft;
nuclear power facilities;
robotics and vision systems.
Main settings
The number of pixels 1024x1024
Pixel size, mkm 11 × 11
Saturation voltage, mV ≥1000
Modulation transfer coefficient at 500 TVL horizontally,% ≥50
The average value of the dark signal, mV / c ≤4
RMS non-uniformity of the dark signal across the field,% ≤4
RMS local 5 × 5 pixel irregularity of the dark signal,% ≤3
Relative root mean square non-uniformity of the output signal across the field,% ≤10
Relative root mean square local in the area of 5 × 5 pixels of the output signal,% ≤9
Integral sensitivity, reduced to source type A, B / (lx · s) 10 ÷ 15
Threshold exposure (at accumulation time up to 1 s), lx · s ≤2 · 10-5
The coefficient of suppression of local peresvetki, Rel. units ≥2
Charge transfer inefficiency, rel. units 1 · 10-5
Spectral sensitivity range, nm 450 ÷ 1000
Number of white and black defective pixels, pcs. ≤100
On the basis of the device, upon request of the Customer, an integrated product can be developed, including a control and signal processing device.