FPPZ has an accumulation section and a memory section. The memory section has a format of 1048 (G) × 1032 (V) pixels and control independent of the accumulation section. Resistance of FPPZ to IICP to the influence of factor 7.С with characteristics 7.С4 is not lower than 5.75 × 1Us.

FPPZ "Quad – T" is a matrix photosensitive device with personnel charge transfer, bulk n-channel, p-type substrate. It can be produced with thermopile and fiber-optic input

Matrix photosensitive device with charge transfer with four independent sections, volume n-channel and pixel number 4096 × 4096. The photosensitive field of the device has four independent accumulation sections that can operate in the mode of pulsed and continuous illumination. The matrix has central symmetry, two output registers and four output nodes